Better Thermal dissipation performance
Ultra MOS
By directing current across the chip surface and utilizing advanced metal interconnect schemes, the effective metal layer area is maximized, significantly lowering thermal resistance—an advantage unattainable with traditional LDMOS.
VDMOS
Although there is a large metal contact area, because the current flows from the front side of the chip to the back side, heat accumulates inside the chip. This phenomenon becomes more pronounced as integration density increases and device dimensions shrink.
